Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device

Koki Chonan; Nguyen Huynh Duy Khang; Masaaki Tanaka; Pham Nam Hai

doi:10.7567/1347-4065/ab5b31

Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device

Mesoscale and Nanoscale Physics 2020-02-24 v1 Materials Science Quantum Physics

Authors: Koki Chonan , Nguyen Huynh Duy Khang , Masaaki Tanaka , Pham Nam Hai

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Abstract

We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lateral ferromagnetic metal / semiconductor / ferromagnetic metal spin-valve devices reported so far.

Keywords

lateral spin-valve magnetoresistance spin-dependent voltage MnGa GaAs schottky barrier ferromagnetic semiconductor device

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@article{arxiv.1911.11295,
  title  = {Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device},
  author = {Koki Chonan and Nguyen Huynh Duy Khang and Masaaki Tanaka and Pham Nam Hai},
  journal= {arXiv preprint arXiv:1911.11295},
  year   = {2020}
}

Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device

Abstract

Keywords

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