We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8 in case of spins oriented either along [11ˉ0] or [110] directions and 25 anisotropy between in-plane and perpendicular-to-plane orientation of spins.
@article{arxiv.0907.1202,
title = {Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices},
author = {Andreas Einwanger and Mariusz Ciorga and Ursula Wurstbauer and Dieter Schuh and Werner Wegscheider and Dieter Weiss},
journal= {arXiv preprint arXiv:0907.1202},
year = {2015}
}