The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the addition energies. From the magneto-capacitance spectroscopy data, the authors found a fully polarized ensemble of electronic spins above 10 T when B∥[001] and at 2.8 K. Finally, by including the g-tensor anisotropy the angular dependence of spin polarization with the magnetic field B orientation and strength could be determined.
@article{arxiv.0710.4542,
title = {Determination of spin polarization in InAs/GaAs self-assembled quantum dots},
author = {F. G. G. Hernandez and T. P. Mayer Alegre and G. Medeiros-Ribeiro},
journal= {arXiv preprint arXiv:0710.4542},
year = {2008}
}