Electrical Spin Pumping of Quantum Dots at Room Temperature
Materials Science
2009-11-11 v1
Abstract
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices.
Keywords
Cite
@article{arxiv.cond-mat/0501759,
title = {Electrical Spin Pumping of Quantum Dots at Room Temperature},
author = {C. H. Li and G. Kioseoglou and O. M. J. van t Erve and M. E. Ware and D. Gammon and R. M. Stroud and B. T. Jonker and R. Mallory and M. Yasar and A. Petrou},
journal= {arXiv preprint arXiv:cond-mat/0501759},
year = {2009}
}
Comments
4 figures, accepted by Appl. Phys. Lett