Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

M. O. Nestoklon; O. Krebs; H. Jaffrès; S. Ruttala; J. -M. George; J. -M. Jancu; P. Voisin

doi:10.1063/1.3683525

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

Mesoscale and Nanoscale Physics 2016-06-27 v1

Authors: M. O. Nestoklon , O. Krebs , H. Jaffrès , S. Ruttala , J. -M. George , J. -M. Jancu , P. Voisin

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Abstract

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

Keywords

anisotropic magnetoresistance GaMnAs single impurity tunnel diode tight-binding spin-orbit coupling p-d exchange interaction

Cite

@article{arxiv.1201.1439,
  title  = {Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach},
  author = {M. O. Nestoklon and O. Krebs and H. Jaffrès and S. Ruttala and J. -M. George and J. -M. Jancu and P. Voisin},
  journal= {arXiv preprint arXiv:1201.1439},
  year   = {2016}
}

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4 pages, 3 figures

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

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