Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures

C. Adelmann; X. Lou; H. -S. Chiang; J. L. Hilton; B. D. Schultz; S. McKernan; P. A. Crowell; C. J. Palmstrom

doi:10.1063/1.2349833

Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures

Materials Science 2017-01-17 v1

Authors: C. Adelmann , X. Lou , H. -S. Chiang , J. L. Hilton , B. D. Schultz , S. McKernan , P. A. Crowell , C. J. Palmstrom

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Abstract

Electrical spin injection from ferromagnetic $\delta$ -MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$ -MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.

Keywords

spin injection perpendicular magnetic anisotropy delta-MnGa light emitting diode Hanle effect ferromagnetic semiconductor heterostructure

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@article{arxiv.cond-mat/0606013,
  title  = {Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures},
  author = {C. Adelmann and X. Lou and H. -S. Chiang and J. L. Hilton and B. D. Schultz and S. McKernan and P. A. Crowell and C. J. Palmstrom},
  journal= {arXiv preprint arXiv:cond-mat/0606013},
  year   = {2017}
}

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4 pages, 3 figures

Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures

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