Spin-polarized light emitting diode using metal/insulator/semiconductor structures

T. Manago; H. Akinaga

doi:10.1063/1.1496493

Spin-polarized light emitting diode using metal/insulator/semiconductor structures

Materials Science 2009-11-07 v1

Authors: T. Manago , H. Akinaga

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Abstract

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.

Keywords

spintronics spin polarization and magnetic phenomena electron emission

Cite

@article{arxiv.cond-mat/0202389,
  title  = {Spin-polarized light emitting diode using metal/insulator/semiconductor structures},
  author = {T. Manago and H. Akinaga},
  journal= {arXiv preprint arXiv:cond-mat/0202389},
  year   = {2009}
}

Comments

4 pages including 3 figures

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