In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicon's indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300\% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.
@article{arxiv.1711.02451,
title = {Room temperature magneto-optic effect in silicon light-emitting diodes},
author = {F. Chiodi and S. L. Bayliss and L. Barast and D. Débarre and H. Bouchiat and R. H. Friend and A. D. Chepelianskii},
journal= {arXiv preprint arXiv:1711.02451},
year = {2018}
}