We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. Lett. 105,156602(2010)]. As a result we conclude that both skewness and side jump contribution cannot be fully independent on the conductivity of the channel.
@article{arxiv.1209.2633,
title = {All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes},
author = {Markus Ehlert and Cheng Song and Mariusz Ciorga and Martin Utz and Dieter Schuh and Dominique Bougeard and Dieter Weiss},
journal= {arXiv preprint arXiv:1209.2633},
year = {2015}
}