Theory of Spin Hall conductivity in n-doped GaAs
Mesoscale and Nanoscale Physics
2007-05-23 v1
Abstract
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew scattering and side jump contributions to the spin Hall conductance. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [Science 306, 1910 (2004)].
Cite
@article{arxiv.cond-mat/0505535,
title = {Theory of Spin Hall conductivity in n-doped GaAs},
author = {Hans-Andreas Engel and Bertrand I. Halperin and Emmanuel I. Rashba},
journal= {arXiv preprint arXiv:cond-mat/0505535},
year = {2007}
}
Comments
5 pages, 1 figure