We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, we confirmed that our data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.
@article{arxiv.cond-mat/0611451,
title = {Local Hall effect in hybrid ferromagnetic/semiconductor devices},
author = {Jinki Hong and Sungjung Joo and Tae-Suk Kim and Kungwon Rhie and K. H. Kim and S. U. Kim and B. C. Lee and Kyung-Ho Shin},
journal= {arXiv preprint arXiv:cond-mat/0611451},
year = {2015}
}
Comments
4 pages with 4 fugures. Accepted for publication in Applied Physics Letters