English

Residual Resistance in a 2DES: A Phenomenological Approach

Condensed Matter 2007-05-23 v3

Abstract

We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L_{x,y}.

Keywords

Cite

@article{arxiv.cond-mat/0305562,
  title  = {Residual Resistance in a 2DES: A Phenomenological Approach},
  author = {A. F. Volkov and V. V. Pavlovskii},
  journal= {arXiv preprint arXiv:cond-mat/0305562},
  year   = {2007}
}

Comments

7 pages, 3 Fig; typos corrected, references added