English

Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

Materials Science 2009-11-07 v1
Authors: K W Edmonds , R P Campion , K-Y Wang , A C Neumann , B L Gallagher , C T Foxon , P C Main
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Abstract

The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.

Keywords

GaMnAs magnetoresistance Hall effect anomalous Hall effect Berry phase ferromagnetic semiconductor

Cite

@article{arxiv.cond-mat/0209123,
  title  = {Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs},
  author = {K W Edmonds and R P Campion and K-Y Wang and A C Neumann and B L Gallagher and C T Foxon and P C Main},
  journal= {arXiv preprint arXiv:cond-mat/0209123},
  year   = {2009}
}

Comments

3 pages, 4 figures, MMM conference proceedings

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