Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier

T. Ishikura; Z. Cui; L-K. Liefeith; K. Konishi; Kanji Yoh

doi:10.7567/APEX.7.073001

Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier

Mesoscale and Nanoscale Physics 2015-06-15 v1 Materials Science

Authors: T. Ishikura , Z. Cui , L-K. Liefeith , K. Konishi , Kanji Yoh

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Abstract

We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 {\mu}m in nonlocal set-up at 1.4 K. The spin polarization of Ni81Fe19/MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional thermal treatment.

Keywords

electrical spin injection ferromagnet InAs heterostructures MgO tunnel barrier spin diffusion length spin polarization spin valve quantum well

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@article{arxiv.1304.1671,
  title  = {Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier},
  author = {T. Ishikura and Z. Cui and L-K. Liefeith and K. Konishi and Kanji Yoh},
  journal= {arXiv preprint arXiv:1304.1671},
  year   = {2015}
}

Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier

Abstract

Keywords

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