We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how the current, tunneling to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for the non-relaxed spin splitting of the chemical potential, that is spin accumulation, in the GaAs well. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.
Cite
@article{arxiv.cond-mat/0211409,
title = {Electrical detection of spin accumulation in a p-type GaAs quantum well},
author = {R. Mattana and J. -M. George and H. Jaffres and F. Nguyen Van Dau and A. Fert and B. Lepine and A. Guivarc'h and G. Jezequel},
journal= {arXiv preprint arXiv:cond-mat/0211409},
year = {2009}
}
Comments
4 pages - 2 figues; one added note; some numbers corrected on page 1