English

Hole spin polarization in GaAlAs:Mn structures

Materials Science 2009-10-31 v2
Authors: A. Ghazali , I. C. da Cunha Lima , M. A. Boselli
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Abstract

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.

Keywords

spin physics in semiconductors spin polarization and magnetic phenomena quantum wells

Cite

@article{arxiv.cond-mat/0010111,
  title  = {Hole spin polarization in GaAlAs:Mn structures},
  author = {A. Ghazali and I. C. da Cunha Lima and M. A. Boselli},
  journal= {arXiv preprint arXiv:cond-mat/0010111},
  year   = {2009}
}

Comments

4 pages

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