The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.
@article{arxiv.cond-mat/9912018,
title = {Magnetic ordering in GaAlAs:Mn double well structure},
author = {M. A. Boselli and I. C. da Cunha Lima and A. Ghazali},
journal= {arXiv preprint arXiv:cond-mat/9912018},
year = {2009}
}