Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells
Materials Science
2009-11-07 v1 Mesoscale and Nanoscale Physics
Abstract
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
Cite
@article{arxiv.cond-mat/0103473,
title = {Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells},
author = {Igor Zutic and Jaroslav Fabian and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0103473},
year = {2009}
}
Comments
4 pages, 3 figures