We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-St\"{u}ckelberg-Majorana interferometry with and without magnetic fields. Our experimental results revealed the coexistence of spin-conserving and spin-flip tunneling channels in the two-spin system in non-zero magnetic fields. Additionally, we obtained the spin-conserving/spin-flip tunneling rates of the two-spin system through the double quantum dots in the TFET. These findings will improve our understanding of the two-spin system in silicon TFET qubits and may facilitate the coherent control of quantum states through all-electric manipulation.
@article{arxiv.2311.02885,
title = {Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs},
author = {Satoshi Moriyama and Takahiro Mori and Keiji Ono},
journal= {arXiv preprint arXiv:2311.02885},
year = {2023}
}