Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
Mesoscale and Nanoscale Physics
2009-11-10 v2 Materials Science
Abstract
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of the magnetization of a model system.
Cite
@article{arxiv.cond-mat/0409106,
title = {Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes},
author = {Swaroop Ganguly and L. F. Register and S. Banerjee and A. H. MacDonald},
journal= {arXiv preprint arXiv:cond-mat/0409106},
year = {2009}
}
Comments
20 pages, 7 figures, corrected typo in caption of figure 1