Dynamic Systems Model for Filamentary Mem-Resistors
Mesoscale and Nanoscale Physics
2011-06-28 v3
Abstract
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction
Keywords
Cite
@article{arxiv.1103.4663,
title = {Dynamic Systems Model for Filamentary Mem-Resistors},
author = {Blaise Mouttet},
journal= {arXiv preprint arXiv:1103.4663},
year = {2011}
}
Comments
5 pages