Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors
Mesoscale and Nanoscale Physics
2011-06-29 v3
Abstract
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM
Keywords
Cite
@article{arxiv.1105.0134,
title = {Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors},
author = {Blaise Mouttet},
journal= {arXiv preprint arXiv:1105.0134},
year = {2011}
}
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5 pages