Related papers: New Possibilities for Obtaining a Steep Nonlinear …
In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…
On examples of Bose-Einstein condensates embedded in two-dimensional optical lattices we show that in nonlinear periodic systems modulational instability and inter-band tunneling are intrinsically related phenomena. By direct numerical…
Resonant tunneling through identical potential barriers is a textbook problem in quantum mechanics. Its solution yields total transparency (100% tunneling) at discrete energies. This dramatic phenomenon results from coherent interference…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
Dynamical tunnelling between symmetry-related stable modes is studied in the periodically driven pendulum. We present strong evidence that the tunnelling process is governed by nonlinear resonances that manifest within the regular…
We present a theoretical analysis and numerical simulations of lateral current density fronts in bistable resonant-tunneling diodes with Z-shaped current-voltage characteristics. The bistability is due to the charge accumulation in the…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
A system of two coupled semiconductor-based resonators is studied when lasing around an exceptional point. We show that the presence of nonlinear saturation effects can have important ramifications on the transition behavior of this system.…
Tunneling in the presence of an opaque barrier, part of which varies in time, is investigated numerically and analytically in one dimension. Clearly, due to the varying barrier a tunneling particle experiences spectral widening. However, in…
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics…
A nonlinear Schroedinger model in a square well and managed nonlinearity is shown to possess nonlinear states as continuous extensions of the linear levels. The solutions are remarkably stable up to a threshold amplitude where a soliton is…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the…
Electron tunneling between quantum Hall systems on the same two dimensional plane separated by a narrow barrier is studied. We show that in the limit where inelastic scattering time is much longer than the tunneling time, which can be…
Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…
Semiconductor $p^+ - p^- - n - p^+ - n^{++}$ structures with large junction and contact areas are treated as 1 \times 2-dimensional active media, in which self-organized pattern formation can be expected. The local bistable behavior of the…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…