Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
@article{arxiv.1506.01224,
title = {A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures},
author = {Wendy E. Purches and Alessandro Rossi and Ruichen Zhao and Sergey Kafanov and Timothy L. Duty and Andrew S. Dzurak and Sven Rogge and Giuseppe C. Tettamanzi},
journal= {arXiv preprint arXiv:1506.01224},
year = {2015}
}
Comments
6 pages, 4 figures, minor changes from the previous version 1