We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C time constant and the detectivity D* are presented.
@article{arxiv.0707.1213,
title = {High-temperature PbTe diodes},
author = {Z. Dashevsky and V. Kasiyan and E. Mogilko and A. Butenko and R. Kahatabi and S. Genikov and V. Sandomirsky and Y. Schlesinger},
journal= {arXiv preprint arXiv:0707.1213},
year = {2009}
}