Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Tillmann Krauss; Frank Wessely; Udo Schwalke

Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Mesoscale and Nanoscale Physics 2014-04-11 v1 Materials Science

Authors: Tillmann Krauss , Frank Wessely , Udo Schwalke

Abstract

In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable on the fly by applying an appropriate control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.

Keywords

reconfigurable FET electrostatic doping dual metal-gate Schottky S/D junctions SOI substrate CMOS Si-nanowire

Cite

@article{arxiv.1404.2879,
  title  = {Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS},
  author = {Tillmann Krauss and Frank Wessely and Udo Schwalke},
  journal= {arXiv preprint arXiv:1404.2879},
  year   = {2014}
}

Comments

Nanoarch 2014 Paris

Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Abstract

Keywords

Cite

Comments

Related papers