A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive.
@article{arxiv.1109.5299,
title = {A heterojunction modulation-doped Mott transistor},
author = {Junwoo Son and Siddharth Rajan and Susanne Stemmer and S. James Allen},
journal= {arXiv preprint arXiv:1109.5299},
year = {2011}
}
Comments
The article has been accepted by Journal of Applied Physics. After it is published, it will be found at: http://jap.aip.org/