Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Sriram Krishnamoorthy; Zhanbo Xia; Chandan Joishi; Yuewei Zhang; Joe McGlone; Jared Johnson; Mark Brenner; Aaron R. Arehart; Jinwoo Hwang; Saurabh Lodha; Siddharth Rajan

doi:10.1063/1.4993569

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Mesoscale and Nanoscale Physics 2017-08-02 v1 Applied Physics

Authors: Sriram Krishnamoorthy , Zhanbo Xia , Chandan Joishi , Yuewei Zhang , Joe McGlone , Jared Johnson , Mark Brenner , Aaron R. Arehart , Jinwoo Hwang , Saurabh Lodha , Siddharth Rajan

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Abstract

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

Keywords

doping in semiconductors field-effect transistors doped magnetic materials

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@article{arxiv.1706.09492,
  title  = {Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor},
  author = {Sriram Krishnamoorthy and Zhanbo Xia and Chandan Joishi and Yuewei Zhang and Joe McGlone and Jared Johnson and Mark Brenner and Aaron R. Arehart and Jinwoo Hwang and Saurabh Lodha and Siddharth Rajan},
  journal= {arXiv preprint arXiv:1706.09492},
  year   = {2017}
}

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Abstract

Keywords

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