On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Applied Physics
2021-08-05 v1
Abstract
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.
Keywords
Cite
@article{arxiv.2103.00096,
title = {On the Performance of Dual-Gate Reconfigurable Nanowire Transistors},
author = {Bin Sun and Benjamin Richstein and Patrick Liebisch and Thorben Frahm and Stefan Scholz and Jens Trommer and Thomas Mikolajick and Joachim Knoch},
journal= {arXiv preprint arXiv:2103.00096},
year = {2021}
}
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5 pages