English

Challenges and Opportunities in Implementing Negative Differential Resistance Mode Reconfigurable Field Effect Transistors

Materials Science 2024-01-30 v2 Disordered Systems and Neural Networks Applied Physics

Abstract

Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices, approach has been outlined utilizing the NDR mode reconfigurable functionality over the transistors. Being an individual device efficient in exhibiting different task with the different configurations in the same physical circuitry. On the view of reconfigurable transistors, possibly authorize the reconfiguration from a p-type to n-type channel transistor has been expelled as an emerging application such as static memory cells, fast switching logic circuits as well as energy efficient computational multi valued logic. This article emphasizes NDR mode RFET along with its classification, followed by enhancing the RFET technology concepts and RFETs future potential has been discussed briefing with the growing applications like hardware security as well as neuro-inspired computing.

Keywords

Cite

@article{arxiv.2312.08351,
  title  = {Challenges and Opportunities in Implementing Negative Differential Resistance Mode Reconfigurable Field Effect Transistors},
  author = {Lephe S and Gifrin Fredik Raj S and Abijesh Euphrine A and Janaki S and Jamina C and Arun Jose L},
  journal= {arXiv preprint arXiv:2312.08351},
  year   = {2024}
}

Comments

28 pages, 9 figures