Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect to the process induced variations in (i) the channel length and (ii) the thickness of the silicon thin-film and the gate oxide. This paper, for the first time, studies the impact of the above process variations on the electrical characteristics of a Double Gate Tunnel Field Effect Transistor (DGTFET). Using two dimensional device simulations, we propose the Strained Double Gate Tunnel Field Effect Transistor (SDGTFET) with high-k gate dielectric as a possible solution for effectively compensating the process induced variations in the on-current, threshold voltage and subthreshold-swing improving the reliability of the DGTFET.
@article{arxiv.1010.3476,
title = {Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability},
author = {Sneh Saurabh and M. Jagadesh Kumar},
journal= {arXiv preprint arXiv:1010.3476},
year = {2010}
}