In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and in principle allows scaling down the atomic level. The demonstrated ncFET features a 104 on/off current ratio at room temperature, a low 30 pA/μm leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.
@article{arxiv.1405.1479,
title = {A Silicon Nanocrystal Tunnel Field Effect Transistor},
author = {Patrick Harvey-Collard and Dominique Drouin and Michel Pioro-Ladrière},
journal= {arXiv preprint arXiv:1405.1479},
year = {2014}
}
Comments
Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 193505 (2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/19/10.1063/1.4876765. 4 pages, 3 figures