A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.
@article{arxiv.2201.05288,
title = {Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor},
author = {Michael S. Fuhrer and Mark T. Edmonds and Dimitrie Culcer and Muhammad Nadeem and Xiaolin Wang and Nikhil Medhekar and Yuefeng Yin and Jared H Cole},
journal= {arXiv preprint arXiv:2201.05288},
year = {2025}
}
Comments
Accepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021