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Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

Applied Physics 2024-03-19 v1 Materials Science

Abstract

The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two binary states of TFETs. Concerned study proposed NC-TFETs based on ferroionic crystals as promising devices for generating a stable logic state below Vth.

Keywords

Cite

@article{arxiv.2403.11658,
  title  = {Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor},
  author = {Koushik Dey and Bikash Das and Pabitra Kumar Hazra and Tanima Kundu and Sanjib Naskar and Soumik Das and Sujan Maity and Poulomi Maji and Bipul Karmakar and Rahul Paramanik and Subhadeep Datta},
  journal= {arXiv preprint arXiv:2403.11658},
  year   = {2024}
}

Comments

21 pages, 4 figures

R2 v1 2026-06-28T15:24:00.319Z