In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region, where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low power applications.
@article{arxiv.1711.01832,
title = {Switching Mechanism and the Scalability of vertical-TFETs},
author = {Fan Chen and Hesameddin Ilatikhameneh and Yaohua Tan and Gerhard Klimeck and Rajib Rahman},
journal= {arXiv preprint arXiv:1711.01832},
year = {2018}
}