Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors
Abstract
A simple model based on the WKB approximation for one-dimensional ballistic multi--gate reconfigurable field--effect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the two-gate and triple-gate RFETs is performed based on the numerical integration of the current integral.
Keywords
Cite
@article{arxiv.1907.10495,
title = {Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors},
author = {Igor Bejenari},
journal= {arXiv preprint arXiv:1907.10495},
year = {2019}
}
Comments
6 pages, 3 figures. This article provides original results, although it contains a certain amount of text reused from arXiv:1703.05092. The relationship between these works includes the similar motivation, model limitation, approximation of the electron distribution, and importance of findings