Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Abstract
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field-emission processes of carrier injection that occur at a Schottky contact. The numerical model is then simplified to yield an analytic equation for current versus voltage (-) in the SB-FET. The lateral electric field at the junction, controlling the carrier injection, is obtained by accurately modeling the electrostatics and the tunneling barrier width. Unlike previous SB-FET models that are valid for near-equilibrium conditions, this model is applicable for a broad bias range as it incorporates the pertinent physics of thermionic, thermionic field-emission, and field-emission processes from a 3D metal into a 2D semiconductor. The - model is validated against the measurement data of 2-, 3-, and 4-layer ambipolar MoTe SB-FETs fabricated in our lab, as well as the published data of unipolar 2D SB-FETs using MoS. Finally, the model's physics is tested rigorously by comparing model-generated data against TCAD simulation data.
Cite
@article{arxiv.2307.04851,
title = {Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors},
author = {Ashwin Tunga and Zijing Zhao and Ankit Shukla and Wenjuan Zhu and Shaloo Rakheja},
journal= {arXiv preprint arXiv:2307.04851},
year = {2023}
}