Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping
Abstract
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding cm. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics.
Cite
@article{arxiv.2512.06318,
title = {Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping},
author = {Qing Lan and Wenqing Song and Siyin Zhu and Yi Zhou and Lu Wang and Junjie Wei and Jiaqi Liu and Zejing Guo and Takashi Taniguchi and Kenji Watanabe and Hai Huang and Jingli Wang and Xiaodong Zhou and Alex Zettl and Jian Shen and Wu Shi},
journal= {arXiv preprint arXiv:2512.06318},
year = {2025}
}