Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices.
@article{arxiv.2505.05887,
title = {Bipolar doping in van der Waals semiconductor through Flexo-doping},
author = {Bo Zhang and Hui Xia and Zhengdong Huang and Yaqian Liu and Jun Kang and Liaoxin Sun and Tianxin Li and Su-Huai Wei and Wei Lu},
journal= {arXiv preprint arXiv:2505.05887},
year = {2025}
}