We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Position-selective doping has also been demonstrated by the post-doping toward TMDs with a patterned mask on the surface. The post-doping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.
@article{arxiv.2105.03182,
title = {A Versatile Post-Doping Towards Two-Dimensional Semiconductors},
author = {Y. Murai and S. Zhang and T. Hotta and Z. Liu and Y. Miyata and T. Irisawa and Y. Gao and M. Maruyama and S. Okada and H. Mogi and T. Sato and S. Yoshida and H. Shigekawa and Takashi Taniguchi and Kenji Watanabe and R. Kitaura},
journal= {arXiv preprint arXiv:2105.03182},
year = {2026}
}