The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to electron donation from chalcogen vacancies, realizing intrinsic p-type TMDCs and achieving precise control over their electronic properties remain challenging. In this work, we introduce a powerful approach to obtain intrinsic hole doping by substituting Ta atom into 2H-WSe2. A combining study of molecular beam epitaxy growth and in-situ angle-resolved photoemission spectroscopy characterization clearly reveals that Ta substitution induces a significant hole doping and provides a possible way of a semiconductor-to-metal transition in 2H-WSe2.
@article{arxiv.2601.08284,
title = {Giant Hole-doping in 2H-WSe2 via Ta Substitution},
author = {Minhee Kang and Woojin Choi and Choongyu Hwang and Jinwoong Hwang},
journal= {arXiv preprint arXiv:2601.08284},
year = {2026}
}