Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Ansh; J Kumar; R K Mishra; S Raghavan; Mayank Shrivastava

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Applied Physics 2019-01-09 v1

Authors: Ansh , J Kumar , R K Mishra , S Raghavan , Mayank Shrivastava

Abstract

One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs with comparable n-type and p-type behavior. Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 to realize enhanced ambipolar behavior along with a complete transition from n to p-type behavior of WSe2 FETs. The technique involves dry chemistry between Chalcogen atom and TMDC surface which leads to surface states that cause improved hole and electron injection through the FETs. We propose such a technique for realization of all WSe2 based CMOS integrated circuits and therefore unveil its potential towards technology.

Keywords

tungsten diselenide field effect transistors chalcogen contact engineering cmos integration ambipolar tmdc

Cite

@article{arxiv.1901.02147,
  title  = {Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors},
  author = {Ansh and J Kumar and R K Mishra and S Raghavan and Mayank Shrivastava},
  journal= {arXiv preprint arXiv:1901.02147},
  year   = {2019}
}

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Abstract

Keywords

Cite

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