Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-doping. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor (FET) devices exhibit competitive p-type performances, including ~10^6 current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 10^5) and excellent photodetecting performance. Our study suggests that substitutional Ta-doping holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications.
Keywords
Cite
@article{arxiv.1707.05197,
title = {Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping},
author = {Yajun Fu and Mingsheng Long and Anyuan Gao and Yu Wang and Chen Pan and Xiaowei Liu and Junwen Zeng and Kang Xu and Lili Zhang and Erfu Liu and Weida Hu and Xiaomu Wang and Feng Miao},
journal= {arXiv preprint arXiv:1707.05197},
year = {2017}
}
Comments
To appear in Applied Physics Letters; 31 pages, 4 pages, 7 supplementary figures; submitted on May 1st, 2017