Nanostructured transition metal dichalcogenide multilayers for advanced nanophotonics
Abstract
Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown to be highly promising for nanophotonic applications, as motivated by their exceptionally high refractive indexes and optical anisotropy. Here, we extend this vision to more sophisticated structures, such as periodic arrays of nanodisks and nanoholes, as well as proof-of-concept waveguides and resonators. We specifically focus on various advanced nanofabrication strategies, including careful selection of resists for electron beam lithography and etching methods. The specific materials studied here include semiconducting WS, in-plane anisotropic ReS, and metallic TaSe, TaS and NbSe. The resulting nanostructures can potentially impact several nanophotonic and optoelectronic areas, including high-index nanophotonics, plasmonics and on-chip optical circuits. The knowledge of TMD material-dependent nanofabrication parameters developed here will help broaden the scope of future applications of these materials in all-TMD nanophotonics.
Cite
@article{arxiv.2202.04898,
title = {Nanostructured transition metal dichalcogenide multilayers for advanced nanophotonics},
author = {Battulga Munkhbat and Betül Küçüköz and Denis G. Baranov and Tomasz J. Antosiewicz and Timur O. Shegai},
journal= {arXiv preprint arXiv:2202.04898},
year = {2022}
}