Broadband Transistor-Injected Dual Doping Quantum Cascade Laser
Abstract
A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different doping in each stack of a homogeneous superlattice is proposed. By adjusting the base-emitter bias Vbe of the bipolar transistor to supply electrons in the dual doping regions, charge quasi-neutrality can be achieved to generate different optical transitions in each cascading superlattice stack. These transitions are then stacked and amplified to contribute to a broad flat gain spectrum. Model calculations of a designed TI- D2QCL show that a broad flat gain spectrum ranging from 9.41um to 12.01um with a relative bandwidth of 0.24 can be obtained, indicating that the TI- D2QCL with dual doping pattern may open a new pathway to the appealing applications in both MIR and THz frequency ranges, from wideband optical generations to advanced frequency comb technologies.
Cite
@article{arxiv.2012.03275,
title = {Broadband Transistor-Injected Dual Doping Quantum Cascade Laser},
author = {Zhiyuan Lin and Zhuoran Wang and Guohui Yuan and Jean-Pierre Leburton},
journal= {arXiv preprint arXiv:2012.03275},
year = {2021}
}