The equivalent electrical circuit of the Ebers-Moll type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.
Cite
@article{arxiv.cond-mat/0409196,
title = {The Ebers-Moll model for magnetic bipolar transistors},
author = {J. Fabian and I. Zutic},
journal= {arXiv preprint arXiv:cond-mat/0409196},
year = {2007}
}