Conductance modulation in spin field-efect transistors under finite bias voltages
Mesoscale and Nanoscale Physics
2007-05-23 v1
Abstract
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.
Keywords
Cite
@article{arxiv.cond-mat/0403199,
title = {Conductance modulation in spin field-efect transistors under finite bias voltages},
author = {Liangbin Hu and Ju Gao and Shun-Qing Shen},
journal= {arXiv preprint arXiv:cond-mat/0403199},
year = {2007}
}
Comments
7 pages, 3 figures, to appear in Physical Review B, (April, 2004)