Spin interference in silicon three-terminal one-dimensional rings
Abstract
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.
Cite
@article{arxiv.cond-mat/0605344,
title = {Spin interference in silicon three-terminal one-dimensional rings},
author = {N. T. Bagraev and N. G. Galkin and W. Gehlhoff and L. E. Klyachkin and A. M. Malyarenko and I. A. Shelykh},
journal= {arXiv preprint arXiv:cond-mat/0605344},
year = {2015}
}
Comments
8 pages, 5 figures