Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by β= 28.5 meVA˚ and the Rashba coefficient α is tuned from 75 to 53 meVA˚ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
@article{arxiv.1704.03482,
title = {Spin-orbit interaction in a dual gated InAs/GaSb quantum well},
author = {Arjan J. A. Beukman and Folkert K. de Vries and Jasper van Veen and Rafal Skolasinski and Michael Wimmer and Fanming Qu and David T. de Vries and Binh-Minh Nguyen and Wei Yi and Andrey A. Kiselev and Marko Sokolich and Michael J. Manfra and Fabrizio Nichele and Charles M. Marcus and Leo P. Kouwenhoven},
journal= {arXiv preprint arXiv:1704.03482},
year = {2017}
}