Spin field-effect transistor in a quantum spin-Hall device
Mesoscale and Nanoscale Physics
2018-08-28 v1
Abstract
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: when ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.
Cite
@article{arxiv.1808.07818,
title = {Spin field-effect transistor in a quantum spin-Hall device},
author = {R. Battilomo and N. Scopigno and C. Ortix},
journal= {arXiv preprint arXiv:1808.07818},
year = {2018}
}